View FDMA520PZ_4232291.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDMA520PZ Single P-Channel PowerTrench(R) MOSFET
April 2008
FDMA520PZ
Single P-Channel PowerTrench(R) MOSFET
-20V, -7.3A, 30m Features
Max rDS(on) = 30m at VGS = -4.5V, ID = -7.3A Max rDS(on) = 53m at VGS = -2.5V, ID = -5.5A Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm HBM ESD protection level > 3k V typical (Note 3) RoHS Compliant
tm
General Description
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Pin 1
D
D
G
Bottom Drain Contact
Drain
Source
D D G
1
6 5 4
D D S
2 3
D
D
S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25C unless otherwise noted
VGS ID PD TJ, TSTG Symbol VDS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings -20 12 -7.3 -24 2.4 0.9 -55 to +150 Units V V A W C
Thermal Characteristics
RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 52 145 C/W
Package Marking and Ordering Information
Device Marking 520 Device FDMA520PZ Package MicroFET 2X2 Reel Size 7'' Tape Width 8mm Quantity 3000 units
(c)2008 Fairchild Semiconductor Corporation FDMA520PZ Rev.B1
1
www.fairchildsemi.com
FDMA520PZ Single P-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS TJ IDSS IGSS BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V -20 -8.4 -1 10 V mV/C A A
On Characteristics
VGS(th) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS(th) TJ VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -2.5V, ID = -5.5A VDS = -5V, ID = -7.3A VGS = -4.5V, ID = -7.3A -0.6 -1.1 3.5 26 42 36 22 30 53 55 S m -1.5 V mV/C
rDS(on) gFS
VGS = -4.5V, ID = -7.3A ,TJ = 125C
Dynamic Characteristics
Coss Crss Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10V, VGS = 0V, f = 1MHz 1235 255 225 1645 340 340 pF pF pF
Switching Characteristics
tr tf td(on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VDD = -5V, ID = -7.3A VGS = -4.5V VDD = -10V, ID = -7.3A VGS = -4.5V, RGEN = 6 10 29 83 74 14 2.9 4.4 20 47 133 119 20 ns ns ns ns nC nC nC
td(off)
Qg
Qgd
Qgs
Drain-Source Diode Characteristics
VSD Qrr trr IS Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -2A IF =-7.3A, di/dt = 100A/s -0.8 30 22 -2 -1.2 45 33 A V ns nC
Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. a. 52C/W when mounted on a 1 in2 pad of 2 oz copper b.145C/W when mounted on a minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3: The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied.
FDMA520PZ Rev.B1
2
www.fairchildsemi.com
FDMA520PZ Single P-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
24
-ID, DRAIN CURRENT (A)
VGS = -4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = -4V
3.0
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
18
VGS = -3.5V VGS = -3V VGS = -2.5V
2.5
VGS = -2.5V
2.0
VGS = -3V
12
1.5 1.0
VGS = -4V
VGS = -3.5V
6
VGS = -4.5V
0 0 1 2 3 4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
0.5 0 6 12 18 -ID, DRAIN CURRENT(A) 24
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
60
rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m)
1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.4 1.2 1.0 0.8 0.6 -50
ID = -7.3A VGS = -4.5V
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
50 40
TJ = 125oC
30 20
ID = -3.6A TJ = 25oC
10 2 3 4 5 6 7 -VGS, GATE TO SOURCE VOLTAGE (V) 8
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance vs Junction Temperature
-IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
30
24
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
10 1 0.1 0.01 0.001
VGS = 0V
-ID, DRAIN CURRENT (A)
18
VDD = -5V
TJ = 125oC
12
TJ = 125oC TJ = 25oC
TJ = 25oC
6
TJ = -55oC
TJ
=-55oC
0 0 1 2 3 4
-VGS, GATE TO SOURCE VOLTAGE (V)
0.0001 0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
FDMA520PZ Rev.B1
3
www.fairchildsemi.com
FDMA520PZ Single P-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
-VGS, GATE TO SOURCE VOLTAGE(V)
10
ID = -7.3A
3000
VDD = -5V
Ciss
8 6 4 2 0 0 7
CAPACITANCE (pF)
VDD = -10V
1000
Coss
VDD = -15V
100
f = 1MHz VGS = 0V
Crss
14 21 -Qg, GATE CHARGE(nC)
28
35
30 0.1
1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
60
1E-4
-Ig, GATE LEAKAGE CURRENT(A)
VGS = 0V
rDS(on) LIMIT
1E-5
TJ = 125oC
ID, DRAIN CURRENT (A)
10
100us 1ms 10ms 100ms 1s 10s DC
1E-6 1E-7
TJ = 25oC
1
VGS=4.5V
0.1
SINGLE PULSE R
JA
=145
o
1E-8 1E-9 0 6 9 12 -VGS, GATE TO SOURCE VOLTAGE(V) 3 15
C/W
TA = 25oC
0.01 0.1
1
10
60
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Gate Leakage Current vs Gate to Source Voltage
P(PK), PEAK TRANSIENT POWER (W)
Figure 10. Forward Bias Safe Operating Area
2
NORMALIZED THERMAL IMPEDANCE, ZJA
150 120 90 60 30 0 -4 10
SINGLE PULSE o RJA = 145 C/W TA=25 C
o
1
DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01
0.1
PDM
t1
SINGLE PULSE
t2
0.01
10
-3
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
10 10 10 10 t, PULSE WIDTH (s)
-2
-1
0
1
10
2
10
3
0.005 -4 10
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Single Pulse Maximum Power Dissipation
Figure 12. Transient Thermal Response Curve
FDMA520PZ Rev.B1
4
www.fairchildsemi.com
FDMA520PZ Single P-Channel PowerTrench(R) MOSFET
Dimensional Outline and Pad Layout
FDMA520PZ Rev.B1
5
www.fairchildsemi.com
FDMA520PZ Single P-Channel PowerTrench(R) MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
TM
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) *
FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
tm
PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R)
The Power Franchise(R)
tm
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM
* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDMA520PZ Rev. B1
6
www.fairchildsemi.com

▲Up To Search▲

Price & Availability of FDMA520PZ

	To Download FDMA520PZ Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .